基于GaAs pHEMT实现的毫米波宽频带低插损单刀双掷开关

Millimeter-wave broadband low-loss single-pole double-throw switch based on a GaAs pHEMT technology

介绍了一种基于滤波器优化方法的双节枝毫米波开关拓扑架构,每个节枝由串联的1/4波长阻抗变换器及并联的开关器件构成,并将整体分布式结构视为一个滤波器问题进行处理,可以有效降低插入损耗.利用该方法采用0.15μm GaAs pHEMT工艺实现了一款应用于毫米波通信频段的单刀双掷(SPDT)开关芯片,整体面积为2.1 mm×1.1 mm.测试结果表明,在23~30 GHz频率范围内,该开关芯片的整体插入损耗小于1.3 dB,隔离度大于23 dB,输入输出回波损耗均大于10 dB.

A double-shunt branch switch structure based on the filter optimization method is introduced to lower the insertion loss.Each branch consists of a series quarter-wavelength impedance converter and a shunt switch device.A distributed Single-Pole Double-Throw(SPDT)switch MMIC treated as a filter issue with this optimization method is implemented in a 0.15μm GaAs pHEMT technology for the millimeter-wave applications.The chip size of the presented switch is 2.1 mm×1.1 mm.Measurement results show that the SPDT switch exhibits less than 1.3 dB of insertion loss,greater than 23dB of isolation and better than 10 dB of input and output return loss in the frequency range from 23 to 30 GHz.