摘要
随着5G物联网的蓬勃发展,基于MEMS传感器等应用的模拟前端电路对噪声要求水平越来越高,其中对于低频应用,低频闪烁(1/f)噪声往往成为系统性能瓶颈。而对于uV甚至nV级别的噪声信号,如何准确地进行测试评估,也需要投入大量的资源进行研究分析。本文基于华润上华流片的两款IP以及TI的两款电源芯片,采用不同的平台进行噪声测试对比分析,最终取得了可靠的低频噪声测试解决方案。
With the vigorous development of the 5G and IOT,analog front-end circuits based on applications such as MEMS sensors have higher and higher levels of noise requirements.For low-frequency applications,low-frequency flicker(1/f)noise often becomes a system performance bottleneck.For noise signals of uV or even nV level,how to accurately test and evaluate also requires a lot of resources for research and analysis.This paper is based on the two IPs of CSMC and two power chips of TI,using different platforms for noise test comparison and analysis,and finally achieved a reliable low-frequency noise test solution.
作者
李琛
王浩
秦仁刚
李鹏
常祥岭
LI Chen;WANG Hao;QIN Rengang;LI Peng;CHANG-Xiang-ling(Shanghai Branch,CSMC technologies Corporation;Shanghai BeilingCorp.,Ltd.)
出处
《中国集成电路》
2021年第10期71-78,共8页
China lntegrated Circuit