基于降低有机场效应晶体管泄漏电流的研究进展

Research Progress on Reducing Leakage Current of Organic Field-Effect Transistors

近年来,由于有机场效应晶体管(OFET)具有成本低、机械柔性优异且可大面积制备等优点成为国际研究的前沿领域之一。迄今为止,OFET的载流子迁移率已超过了非晶硅薄膜晶体管,在柔性集成电路中表现出了巨大的应用潜力。随着技术的不断改进,OFET的工作频率不断提高。首先阐述了泄漏电流的来源;然后介绍了影响OFET静态功耗的最主要因素是栅极泄漏电流,总结了近年来降低OFET栅极泄漏电流的主要方法,如构建多层结构的栅介质、开发新型栅介质材料和交联栅介质材料;最后对降低OFET泄漏电流的方法进行了展望。

In recent years, with the advantages of low cost, excellent mechanical flexibility and large-area fabrication, organic field-effect transistor(OFET) has become one of the frontier fields of international research.So far, the carrier mobility of OFETs has surpassed that of amorphous silicon thin film transistors, showing great application potential in flexible integrated circuits.With the continuous improvement of technology, the operating frequency of OFETs is constantly increasing.Firstly, the source of the leakage current is introduced.Then, it is introduced that the most important factor affecting the static power consumption of OFETs is the gate leakage current.The main methods to reduce the gate leakage current of OFETs in recent years are summarized, such as building multi-layer gate dielectrics, developing new gate dielectric materials and cross-linking gate dielectric materials.Finally, the methods to reduce the leakage current of OFETs are prospected.