低应力掺钪氮化铝薄膜制备技术研究

Study on Fabrication of Low Stress Scandium-doped Aluminum Nitride

分析了双层膜薄膜失效模型,提出了制备低应力掺钪氮化铝薄膜在薄膜体声波谐振器(FBAR)滤波器工艺中的必要性。利用反应溅射法制备掺钪氮化铝薄膜,并使用应力测试仪表征薄膜的力学性能,研究薄膜厚度、工艺时溅射功率、偏置功率以及工艺气压等参数对薄膜应力的影响,通过优化工艺参数制备了接近零应力的掺钪氮化铝薄膜。

The failure model of bi-layer film was analyzed,and the necessity of preparing low stress scandium-doped aluminum nitride(AlN)film in the film bulk acoustic resonator(FBAR)filter process was proposed. Scandium-doped AlN film was prepared by reactive sputtering method,and the mechanical properties of the film were characterized by stress measurement. The influences of film thickness,sputtering power,bias power and process pressure on the film stress were studied. Then almost zero-stress scandium-doped AlN film was prepared by optimizing the process parameters.