3 nm环栅场效应管射频小信号等效电路模型

3nm GAAFET RF Small Signal Equivalent Circuit Model

针对3 nm环栅场效应晶体管,提出了一种射频小信号等效电路模型及基于有理函数拟合的解析模型参数提取方法。首先,在关态条件下提取不受偏置影响的非本征栅/源/漏极电阻、栅到源/漏电容、衬底电容和电阻。然后,在不同偏置条件下提取受偏置影响的本征模型参数。使用Sentaurus TCAD和Matlab对器件进行仿真并拟合得到相关参数,在ADS中验证等效电路模型。结果表明,在10 MHz~300 GHz频率范围内,TCAD仿真与等效电路仿真S参数的最大误差低于2.69%,证实了所建立模型及建模方法的准确性。该项研究成果对射频集成电路设计具有参考价值。

A new type of RF small-signal equivalent circuit model and an analytical modeling method based on rational function fitting were proposed for 3 nm gate-all-around device. At first, the bias-independent extrinsic gate, source and drain resistance, gate-to-source/gate-to-drain capacitance, and substrate capacitance and resistance were extracted. Then, the bias-dependent intrinsic parasitic parameters were extracted under different bias of the device. The 3 D TCAD and Matlab were used to simulate the device and get parasitic parameters by fitting, and the parameter results were put in ADS for verification. The results showed that the maximum error of S parameter between TCAD simulation and equivalent circuit simulation was less than 2.69% at 10 MHz~300 GHz frequency range. The accuracy of the established model and modeling method were verified. The research results had a reference value for RF IC design.