空气对HAC太阳电池晶体硅/本征非晶硅界面污染情况分析

Analysis of air pollution on crystal silicon/intrinsic amorphous silicon interface of HAC solar cells

采用热丝CVD法在N型体硅上以全程真空环境镀膜与IN镀膜后破真空再镀IP的不同形式,分别生长IN-IP非晶硅膜层,用WCT-120对薄膜钝化性能进行分析,并用wxAMPS软件模拟样品电池效率。比对结果表明全程真空环境镀膜样品的反向饱和电流密度(J_(0))和理论开压(iVOC)分别为5.12×10^(-15) A·cm^(-2)和0.731 V,模拟效率为23.15%;IN-IP破真空镀膜样品的J_(0)和iVOC分别为9.06×10^(-14) A·cm^(-2)和0.654 V,模拟效率为20.24%。因此,热丝CVD全程真空环境相对于IN-IP破真空镀膜具有更优的膜层生长方法。

IN-IP amorphous silicon films were grown on N-type bulk silicon by hot filament-chemical vapor deposition(CVD)method in different forms of vacuum coating during the whole process and in coating after vacuum breaking and then IP plating.The passivation performance of the films was analyzed by WCT-120,and the sample cell efficiency was simulated by wxAMPS software.The results showed that the J_(0) and iVOC of the sample obtained by vacuum coating were 5.12×10^(-15) A·cm^(-2) and 0.731 V,respectively,and the simulation efficiency was 23.15%.The J_(0) and iVOC values of the samples obtained by IN-IP vacuum plating were 9.06×10^(-14) A·cm^(-2) and 0.654 V,respectively,and the simulation efficiency was 20.24%;The results showed that the whole vacuum environment of hot filament CVD was a better method for film growth than that of IN-IP vacuum breaking coating.