Strain-dependent resistance and giant gauge factor in monolayer WSe_(2)

We report the strong dependence of resistance on uniaxial strain in monolayer WSe_(2)at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe_(2)potential for application in the highly sensitive strain sensors and high-performance flexible electronics.