Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer

A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot(QD)samples,in which there exists a long-lived metastable state in the wetting layer(WL)through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands.In this article we have proposed a new three-level model to simulate the exciton emission decay curve.In this model,assuming that the excitons in a metastable state will diffuse and be trapped by QDs,and then emit fluorescence in QDs,a stretchedlike exponential decay formula is derived as I(t)=At^(β−1)e^(−(rt)^(β)),which can describe well the long lifetime decay curve with an analytical expression of average lifetime(τ)=1/rГ(1/β+1),where G is the Gamma function.Furthermore,based on the proposed three-level model,an expression of the second-order auto-correlation function g^(2)(t)which can fit the measured g^(2)(t)curve well,is also obtained.