基于玻璃回流的TGV衬底制备

Fabrication of TGV Substrate Based on Glass Reflow

针对MEMS器件背面引线的需求,提出了一种基于玻璃通孔(TGV)加工方法的10.16cm(4inch)圆片衬底的制备工艺流程。首先深硅刻蚀导电硅片,然后将硅片和玻璃片阳极键合,随后将键合后的玻璃-硅圆片经高温加热,使玻璃填充至硅片中,再依次研磨抛光玻璃-硅圆片的正面玻璃和背面硅,直至硅与嵌入玻璃在同一平面,最后得到了厚度为258μm的4inch圆片衬底,其轮廓算术平均偏差、轮廓最大高度、微观不平度十点高度的平均值分别为13,71和49nm。此外,测得圆片中硅导通柱电阻率为0.023Ω·cm。

Aiming at the demand of the backside leads of MEMS devices,aprocess for the fabrication of 10.16 cm(4 inch)wafer substrates based on the through-glass-vias(TGV)processing method is presented.Firstly,the conductive silicon wafer was deeply etched,then anodic bonding was performed between the silicon wafer and the glass wafer,and then the bonded glass-silicon wafer was heated at a high temperature to fill the glass into the silicon wafer.Then the front glass and back silicon of the glass-silicon wafer was grinded and polished until the silicon and the embedded glass were on the same plane.Finally,a 4 inch substrate with a thickness of258μm was obtained.The arithmetic mean deviation of the profile,the maximum profile height and the microscopic unevenness are 13,71 and 49 nm respectively.In addition,the measured resistivity of the silicon via in the wafer is 0.023Ω·cm.