高分辨率极紫外光刻胶的研究进展

Research Progress on High Resolution Extreme Ultraviolet Photoresist

自集成电路芯片诞生半个多世纪以来,芯片尺寸在不断减少,以极紫外光刻为代表的光刻技术也有了显著的发展。同时,实现更高精度的光刻图案需要更加先进的光刻胶材料。传统的聚合物光刻胶材料因其相对分子质量大、高精度条纹易坍塌等缺陷使其使用受到限制。以分子玻璃和无机金属配合物光刻胶为代表的相对分子质量小、结构均一的新型光刻胶材料在国内外得到了广泛发展。本文对现阶段新型极紫外光刻胶材料的发展现状和趋势做了评述。

Since the birth of the integrated circuit chip for more than half a century,the chip size has been continuously reduced,and the photolithography technology represented by extreme ultraviolet(EUV)has also developed significantly.At the same time,more advanced photoresist materials are needed to achieve higher precision photolithography patterns.Traditional polymer photoresist materials are limited in their use due to their large relative molecular mass,high-precision stripes and easy collapse.New photoresist materials with small relative molecular mass and uniform structure represented by molecular glass and inorganic metal complex photoresist have been widely developed at home and abroad.This article reviews the current development status and trends of new photoresist materials.