共溅射制备稀土Yb掺杂Zr基非晶合金薄膜

Preparation of Rare-earth Ytterbium-doped Zr-based Amorphous Alloy Thin Film by Co-sputtering

通过磁控共溅射成功制备了稀土镱(Yb)掺杂Zr基非晶合金薄膜,采用SEM、EDS、XRD和接触角测试仪等手段研究了(Zr_(48)Cu_(44)Al_(8))_(1-x)Yb_(x)(原子分数,%)合金的非晶形成能力及薄膜性能与稀土掺杂浓度的关系。结果表明:掺杂Yb原子分数为9.37%时合金体系具有最强的非晶形成能力。随着稀土Yb溅射功率的增加,XRD低角度出现的预峰逐渐消失,膜层由单相Zr基非晶演变成双相非晶,特别是当功率大于50 W时XRD中出现新的非晶衍射峰,该衍射峰强度随功率增加而增强,因此获得单相Zr基非晶薄膜层的最佳掺杂功率为10 W,此时膜层中稀土元素均匀分布。同时,非晶薄膜表面粗糙度随Yb靶溅射功率增加出现极值点,30 W时薄膜对应的接触角为104.9°,呈现疏水性能。因此,稀土Yb掺杂对Zr基非晶形成能力和薄膜性能产生了显著影响。

The rare earth ytterbium(Yb)doped Zr-based amorphous alloy thin film was successfully prepared by magnetron co-sputtering,scanning electron microscope(SEM),energy dispersive spectrometer(EDS),X-ray diffraction(XRD)and contact angle tester were used to study the relationship between the amorphous forming ability,film properties of(Zr_(48)Cu_(44)Al_(8))_(1-x)Yb_(x)(at%)alloy and the rare earth doping concentration.The results show that the alloy system has the strongest amorphous forming ability when the doped Yb atom concentration is 9.37 at%.With the increase of Yb sputtering power,the pre peak at low angle gradually disappears,and the film layer evolves from single-phase Zr based amorphous to dual-phase amorphous,especially when the power is greater than 50 W,a new amorphous diffraction peak appears in XRD,and the diffraction peak intensity increases with the increase of power.Therefore,the best doping power for obtaining a single-phase Zr-based amorphous film layer is 10 W,and the rare earth elements in the film layer are uniformly distributed.At the same time,the surface roughness of the amorphous film appears to be an extreme point with the increase of sputtering power of Yb target,and the corresponding contact angle of the film is 104.9°at 30 W,showing hydrophobic property.Therefore,the rare earth Yb doping has a significant effect on the Zr-based amorphous forming ability and film properties.