期刊文献+

远程激光诱导击穿光谱技术与应用(特邀) 被引量:10

Remote Laser-induced Breakdown Spectroscopy and Its Application(Invited)
下载PDF
导出
摘要 在冶金工业、核工业、深空探测等领域,受限于高温、强辐射等人员无法达到的极端环境限制,亟需一种可快速准确进行物质成份分析的远距离非接触式探测手段。远程激光诱导击穿光谱技术是一种结合激光远距离传输与控制以及弱光信号采集来获取目标材料物质成份信息的一种技术手段,可以实现极端环境下物质的非接触式远距离探测。本文系统介绍了远程激光诱导击穿光谱系统的光学系统结构,以及不同结构远程激光诱导击穿光谱装置的性能特点及其面临的技术瓶颈。针对远程激光诱导击穿光谱技术探测灵敏度与探测距离受限、光谱信息受限等问题,还介绍了国内外常用的远程激光诱导击穿光谱信号增强方法以及激光诱导击穿光谱与拉曼光谱结合等技术方法。最后简要总结了远程激光诱导击穿光谱技术在爆炸物探测、核工业、深空探测等几个典型领域的应用,展望了其在未来的发展。 It is necessary to develop a remote and non-contact technology for material composition analysis in metallurgy,nuclear industry and deep space exploration to protect the operator and equipment in hazardous environments from high temperature and strong radiation.The remote Laser-induced Breakdown Spectroscopy(Remote LIBS)technology is a combination of the two key technologies including the long-distance transmission and control of laser and the collection of weak spectra signals,which can be used to obtain the information of target material composition from a distance.In this review,the remote LIBS systems with different optical structures are presented.The characteristics and bottlenecks of them are also compared.To improve the detection sensitivity and distance,the signal enhancement methods for remote LIBS are summarized in this review.The combination of LIBS and Raman technology used in remote sensing is introduced too.Finally,some typical application of remote LIBS such as explosives detection,nuclear industry,deep space detection,etc.are discussed,and the development of remote LIBS in the future is prospected.
作者 张大成 冯中琦 魏宽 杨润强 谷天予 李帅帅 侯佳佳 朱江峰 ZHANG Dacheng;FENG Zhongqi;WEI Kuan;YANG Runqiang;GU Tianyu;LI Shuaishuai;HOU Jiajia;ZHU Jiangfeng(School of Physics and Optoelectronic Engineering,Xidian University,Xi'an 710071,China)
出处 《光子学报》 EI CAS CSCD 北大核心 2021年第10期143-155,共13页 Acta Photonica Sinica
基金 国家自然科学基金(No.U2032136) 陕西省自然科学基础研究计划(No.2019JCW-03) 中央高校基本科研业务费(No.ZD2006)。
关键词 激光诱导击穿光谱 遥感 等离子体 元素分析 LIBS Remote sensing Plasma Composition analysis
  • 相关文献

参考文献5

二级参考文献66

  • 1Andrea Carlo Ferrari.硅纳米线的生长及其拉曼光谱研究(英文)[J].光散射学报,2005,17(3):219-221. 被引量:1
  • 2庞宏杰,王存山,张凯舒,苏元军,裴继斌.非晶硅薄膜激光晶化及其结构分析[J].应用激光,2007,27(1):18-20. 被引量:6
  • 3沈德忠,陈建荣.KTP晶体与器件的研究进展及市场展望[J].新材料产业,2007(10):66-71. 被引量:5
  • 4C H OH, M OZAWA, M Matsumura. A novel phase- modulated exeimer - Laser crystallization method of silicon thin films [J]. Jpn J Appl Phys, 1998, 37: 492-495.
  • 5R Ishihara, A Burtsev, P F A Alkemade. Location - control of large Si grains by dual - beam excimerlaser and thick oxide portion [J]. Jpn J Appl Phys, 2000, 39: 3872- 3878.
  • 6H Kuriyama, S Kiyama, S Noguchi. Enlargment of poly- Si film grain size by excimer laser annealing and its application to high - performance poly - Si thin film transistor [J]. Jpn J Appl Phys, 1991, 30: 3700 - 3703.
  • 7J F Michaud, R Rogel, T Mohammed- Brahim, et al. CW argon laser crystallization of silicon films: structural properties [J]. J Non - Crystalline Solids, 2006, 352 : 998 - 1002.
  • 8S J Park, Y M Ku, E H Kim, et al. Selective crystallization of amorphous silicon thin film by a CW green laser [ J ]. Journal of Non - Crystalline Solids, 2006, 352:993 - 997.
  • 9S J Park, Y M Ku, K H Kim, et al. CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size [J]. Thin Solid Films, 2006, 511-512: 243-247.
  • 10H S Marl, K S Jain, A K Shulda, et al. Rarnan study of cw laser- induced crystallization of a- Si: H films on quartz and sapphire substrates [J]. J Appl Phys, 1991, 69(6): 3696-3701.

共引文献36

同被引文献128

引证文献10

二级引证文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部