新型硅基IV族合金材料生长及光电器件研究进展(特邀)

Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)

硅基IV族锗锡和锗铅合金材料带隙随组分可调,并可转变成直接带隙半导体材料,是研制硅基红外探测和发光器件的理想材料。本文首先介绍锗锡和锗铅材料外延生长工作,然后对锗锡光电器件的研究进展进行回顾和讨论。其中,随着锗锡合金中锡组分增加,锗锡光电探测器往高响应度和长探测截止波长方向发展;锗锡激光器的研究则集中在降低激射阈值、提高激射温度和电泵浦方面。本文还对锗铅材料和光电器件的研究进展进行简要介绍和展望。随着硅基高效光源和探测器研究的不断深入,IV族合金材料在硅基红外光电集成领域将继续展现重要的应用价值。

The bandgap of silicon-based germanium tin and germanium lead alloys can be adjusted with the composition,and can be transformed into a direct bandgap semiconductor material.It is an ideal material for developing silicon-based infrared luminescence and detector.This work first introduces the growth of germanium tin and germanium lead alloys,and then reviews the research progress of germanium tin optoelectronic devices.The germanium tin photodetector has developed towards high responsivity and long cut-off wavelength with increasing tin content.The research of germanium tin lasers is focused on low lasing threshold,high lasing temperature and electric pumping.In addition,this work also briefly introduces the research on germanium lead material and optoelectronic devices.With the development of silicon-based high-efficiency light sources and detectors,group IV alloys will continue to show important application value in the field of silicon-based infrared optoelectronic integration.