硅基阻挡杂质带太赫兹探测器及其成像研究

Study on the Silicon Based Blocked-Impurity-Band Terahertz Detector and Its Application for Imaging

太赫兹探测及成像技术是推动太赫兹科学技术发展的基础和关键.为了实现高灵敏太赫兹探测及成像,设计了一种台面型硅基阻挡杂质带太赫兹探测器,详细介绍了其结构及探测机理,描述了其制备工艺流程,并搭建了黑体响应测试系统.结果表明,4.2K温度条件下,3.8V工作偏压时,探测器峰值响应率可达55A/W,响应频段覆盖6.7~60THz.此外,搭建了一套两维扫描成像系统,实现了高分辨率被动成像.实验结果表明,成像系统空间分辨率可达400μm、温度分辨率约为7.5mK.

Terahertz detection and imaging technology are the foundation and key to promote terahertz technology development.In order to realize high sensitivity terahertz detection and imaging,a mesa-type silicon-based blocked-impurityband(BIB)terahertz detector is designed.The structure and detection mechanism of the detector are introduced in detail.The preparation processes are presented briefly.A series of its photoelectric performances are investigated.A blackbody responsivity test system is built.The results show that at 4.2 K temperature and 3.8 V bias,its peak responsivity reaches 55 A/W,and the response spectrum covers the frequency range from 6.7~60 THz.In addition,a scan imaging system is set,and the high-resolution passive imaging is achieved.The imaging result shows that the spatial resolution and the temperature resolution of the imaging system can reach about 400μm and 7.5 mK,respectively.