期刊文献+

硅基阻挡杂质带太赫兹探测器及其成像研究 被引量:1

Study on the Silicon Based Blocked-Impurity-Band Terahertz Detector and Its Application for Imaging
下载PDF
导出
摘要 太赫兹探测及成像技术是推动太赫兹科学技术发展的基础和关键.为了实现高灵敏太赫兹探测及成像,设计了一种台面型硅基阻挡杂质带太赫兹探测器,详细介绍了其结构及探测机理,描述了其制备工艺流程,并搭建了黑体响应测试系统.结果表明,4.2K温度条件下,3.8V工作偏压时,探测器峰值响应率可达55A/W,响应频段覆盖6.7~60THz.此外,搭建了一套两维扫描成像系统,实现了高分辨率被动成像.实验结果表明,成像系统空间分辨率可达400μm、温度分辨率约为7.5mK. Terahertz detection and imaging technology are the foundation and key to promote terahertz technology development.In order to realize high sensitivity terahertz detection and imaging,a mesa-type silicon-based blocked-impurityband(BIB)terahertz detector is designed.The structure and detection mechanism of the detector are introduced in detail.The preparation processes are presented briefly.A series of its photoelectric performances are investigated.A blackbody responsivity test system is built.The results show that at 4.2 K temperature and 3.8 V bias,its peak responsivity reaches 55 A/W,and the response spectrum covers the frequency range from 6.7~60 THz.In addition,a scan imaging system is set,and the high-resolution passive imaging is achieved.The imaging result shows that the spatial resolution and the temperature resolution of the imaging system can reach about 400μm and 7.5 mK,respectively.
作者 王兵兵 王晓东 陈雨璐 张传胜 臧元章 潘鸣 曹俊诚 WANG Bing-bing;WANG Xiao-dong;CHEN Yu-lu;ZHANG Chuan-sheng;ZANG Yuan-zang;PAN Ming;CAO Jun-cheng(KeyLaboratoryof TerahertzSolidStateTechnology,ShanghaiInstituteof Microsystem andInformationTechnology,Shanghai200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;The 50th Research Institute of China Electronics Technology Group Corporation,Shanghai 200331,China)
出处 《电子学报》 EI CAS CSCD 北大核心 2021年第9期1867-1872,共6页 Acta Electronica Sinica
基金 国家自然科学基金(No.61705201,No.61927813,No.61975225) 国家重点研发计划(No.2017YFA0701005) 上海市科学技术委员会(No.18590780100)。
关键词 阻挡杂质带 太赫兹探测器 峰值响应率 扫描成像 分辨率 blocked impurity band terahertz detector peak responsivity scanning imaging resolution
  • 相关文献

参考文献4

二级参考文献53

  • 1姚建铨,路洋,张百钢,王鹏.THz辐射的研究和应用新进展[J].光电子.激光,2005,16(4):503-510. 被引量:70
  • 2张振伟,崔伟丽,张岩,张存林.太赫兹成像技术的实验研究[J].红外与毫米波学报,2006,25(3):217-220. 被引量:36
  • 3曹康白,王子宇.140GHz GaAs体效应谐波振荡器[J].电子学报,1990,18(4):107-108. 被引量:1
  • 4石顺祥,刘继芳,孙艳玲.光的电磁理论[M].西安:西安电子科技大学出版社,2006:69-71.
  • 5J H Booske. New opportunities in vacuum electronics through the application of microfabrication technologies[ A] .Proc IVEC 2002 [ C]. California, USA: IVEC,2002.11 - 12.
  • 6C Spindt. FEA fabrication [ A ]. IEEE Innovative Vacuum Electronics Mini-course, PPPS-2001 Conference [C]. Las Vegas: IEEE IVEM,2001.
  • 7D R Whaley et al. Experimental demonstration of an emission traveling wave tube amplifier[J].IEEE Trans Plasma Science, 2002, 30(3):998- 1008.
  • 8D R Whaley et al. Application of field array to microwave power amplifiers [J]. IEEE Trans Plasma Science,2000,28(3) :727 - 746.
  • 9H Imura et al .Electron gun design for traveling wave tubes(TWTs)using a field emitter array(FEA)cathode[A].IEEE IEDM[C].USA:IEEE IEDM,1997.
  • 10M E Read et al.Carbon-Nanotube Cathode for microwave tubes[A].IEEE Proc IVEC,Davis[C] .USA:IEE IVEC,2001.

共引文献48

同被引文献21

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部