CsPbX_(3)(X=Cl,Br,I)纳米晶的制备及其应用

The Synthesis and Applications of CsPbX_(3)(X=Cl,Br,I)Nanocrystals

全无机钙钛矿CsPbX_(3)(X=Cl,Br,I)纳米晶作为一类新型的低成本直接带隙半导体材料,具有优异的光学性质,如吸收系数高、尺寸和发射波长易调节、半峰宽窄、荧光量子产率高等特性,在照明、能源、信息显示和探测等领域表现出巨大的应用潜力,成为材料领域的研究热点。本文从CsPbX_(3)纳米晶的结构组成入手,重点综述了其常见的制备方法如高温热注入法、室温再沉淀法、溶剂热法、液滴微流控法、阴离子交换法等,对常见的形貌尺寸控制策略如反应温度和表面配体进行归纳,以及改善CsPbX_(3)纳米晶稳定性的策略,总结了此类材料在白色发光二极管、电致发光二极管、激光器、光电探测器、太阳能电池等光电领域的应用情况,最后对CsPbX3纳米晶领域存在的问题和面临的挑战进行了分析和评述。

All-inorganic cesium lead halide perovskite CsPbX_(3)(X=Cl,Br,I)nanocrystals,as a new generation of low cost and direct band gap semiconductor materials,have attracted extensive attention of researchers owing to their outstanding photoluminescence(PL)performance,solution processability,and defect tolerance.Especially,this new emerged materials show arresting optoelectronic properties,such as high absorption coefficient,size-and composition-dependent tunable band gaps from the violet to near-infrared,extremely narrow full width at half-maximum,and high photoluminescence quantum yields(PLQY).Many potential optoelectronic applications have been demonstrated as illumination,energy,information storage and detection.In this review,we mainly focus on the related crystal structure characteristics of CsPbX_(3)nanocrystals,the various colloidal synthesis of monodisperse CsPbX_(3)nanocrystals including the high temperature hot-injection method,room-temperature recrystallization method,solvothermal method,droplet-based micro?uidic method,postsynthetic halide anion exchange reaction,and so on.We also summarize the common strategies for efficiently controlling different morphology and size via controlling the temperature and the capping ligands.The related methods to enhance the stability are also summarized.In addition,we carefully conclude the optoelectronic device of CsPbX_(3)nanocrystals in white light-emitting diodes(WLEDs),electroluminescent light emitting diodes(LEDs),lasers especially in low-threshold amplified spontaneous emission,photodetectors,high-efficiency solar cells,and other optoelectronics fields.Finally,the existing problems and prospects are also provided in detail.