碲镉汞激光线刻蚀研究

Study on laser line etching of HgCdTe

飞秒激光对碲镉汞(HgCdTe)材料刻蚀形成PN结。文章进行了飞秒激光刻蚀试验,使用1 kHz飞秒激光在P型HgCdTe上刻蚀形成线刻蚀区域,并采用激光束诱导电流(laser beam induced current,LBIC)技术对刻蚀区域进行光电流性质探测。试验结果表明,LBIC扫描信号的峰形表现出明显的方向性,刻线两侧的光电流信号存在明显差异。

The femtosecond laser etches the HgCdTe material to form a PN junction.This experiment uses a 1 kHz femtosecond laser to etch on P-type HgCdTe to form line etched area.The laser beam induced current(LBIC)technology is used to detect the photocurrent properties in the etched area.It is found that the peak shape of LBIC signal show obvious directionality,and the location of the signal is related to the direction of the laser etch.