基于CA-LBM三维模型的硅小平面枝晶生长数值模拟

Numerical Simulation of Silicon Facet Dendrite Growth Based on CA-LBM 3D Model

为了解析硅小平面枝晶生长机制,真实再现其生长过程,建立了三维的元胞自动机-格子Boltzmann方法(CA-LBM)耦合模型,通过元胞自动机计算硅枝晶的生长,通过格子Boltzmann方法计算硅晶体凝固过程的温度场,通过硅晶体生长过程中释放出的凝固潜热将二者耦合,并引入高各向异性函数,对硅三维小平面枝晶的生长进行了数值模拟。分析了界面能各向异性及初始过冷度对三维小平面硅枝晶形貌的影响。结果表明:三维硅小平面枝晶具有很强的各向异性,三维模型能更真实准确地模拟硅小平面枝晶的生长。

In order to analyze the growth mechanism of silicon faceted dendrite and reproduce its growth realistically,a 3D model based on cellular automaton-lattice Boltzmann method was proposed.The growth of silicon dendrite was simulated via the cellular automaton.The temperature field of solidifying silicon crystal was calculated by the lattice Boltzmann method.The cellular automaton model and the lattice Boltzmann method were coupled together by the latent heat of solidification released during the growth of silicon crystals and a high anisotropy function was introduced,thus simulating the growth of 3D silicon faceted dendrite.The effects of interfacial energy anisotropy and initial undercooling on the morphology of 3D silicon faceted dendrite were analyzed.The results show that 3D silicon faceted dendrites have a strong anisotropy.The 3D model can simulate the growth of silicon faceted dendrites more realistically and accurately.