Cascode GaN高电子迁移率晶体管高频驱动电路及损耗分析

High-Frequency Drive Circuit and Its Loss Analysis of Cascode GaN High Electron Mobility Transistor

为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂串扰。该文重点研究高频谐振驱动电路的工作模态,对电路损耗进行详细分析,给出电感取值的选取原则,并利用PSIM软件对电路进行仿真。最终搭建实验平台对电路的性能进行测试。结果表明,电感为电容充/放电提供低阻抗通路,能有效减小GaN器件驱动电路的电压振荡,明显降低驱动电路的损耗。仿真和实验同时证明了所提出的电路具有较好的性能。

In order to reduce the loss of the GaN driving circuit during high-frequency operation,a high-frequency resonant drive circuit for the Cascode GaN high electron mobility transistor is proposed in this paper.In the circuit,the traditional power-dissipation device is replaced by the power-storage device,and the GaN device gate capacitor is charged or discharged through the inductance current.At the same time,the crosstalk of bridge arm is suppressed by the active Mueller clamp circuit.In this paper,the working mode of the high-frequency resonant driving circuit was studied,the circuit loss was analyzed in detail,the selection principle of the inductance value was given,and the simulation of the circuit was verified by PSIM software.Finally,an experimental platform was built to test the performance of the circuit.The results show that the inductor provides a low impedance path for capacitor charging or discharging,the voltage oscillation of GaN device drive circuit is effectively reduced,and the loss is obviously reduced.The simulation and experiment show that the proposed circuit has better performance.