磺化二氧化硅膜制备及生长时间对选择透过性的影响

Preparation of Sulfonated Silica Film and Study on the Influence of Growth Time on Its Permselectivity

磺化二氧化硅膜因其介孔垂直有序且表面具有较高的负电荷密度而具备较好的阳离子选择透过性。结合Stober溶液生长法和共缩合法在ITO基片上合成了具有垂直介孔的超薄磺化二氧化硅膜。TEM,SEM和电化学对样品的表征结果表明,磺化二氧化硅膜的介孔垂直有序,表面连续。选择透过性实验表明,随着膜生长时间的增加,磺化二氧化硅膜对Na^(+)的选择透过性增加。超薄磺化二氧化硅膜在盐差能收集方面具有一定的应用前景,降低膜生长时间可获得更高的输出功率。

Sulfonated mesoporous silica film has good cation permselectivity,due to the perpendicular orientation,ordered and high negative charge density on the surface of its mesoporous.In this paper,ultrathin sulfonated silica film with perpendicular mesoporous was synthesized on ITO substrate by St ber approach combining with co-condensation method.TEM,SEM and electrochemical characterization of samples showed that the mesoporous of sulfonated silica film was perpendicular and ordered.The surface was continuous.According to permselectivity test,the permselectivity of sulfonated silica film to Na^(+) increased with the increase of growth time of film.Ultrathin sulfonated silica film with perpendicular mesoporous have a certain application prospect in the collection of salt differential energy.Higher output power could be achieved by reducing the growth time of film.