一种具有方筒型栅和浮栅的可编程静电场效应晶体管

Programmable Electrostatic Field Effect Transistor with Square Cylandrical Gate and Floating Gate

为改进可编程式静电场效应晶体管,设计一款具有方筒型栅和控浮栅的新型器件。设计通过方筒型栅的环栅结构产生带带隧穿大电流作为正向导通电流,采用金属作为电极与硅体形成高肖特基势垒从而极大降低热激发电流。硅体上方的方筒型栅极向浮栅传输电荷充电,在结构上减少一个电极。充入的浮栅电荷针对N型和P型工作态都有助于降低反向漏电流,实现更低的亚阈值摆幅和反向泄露电流,以及更高的正向导通电流和开关电流比,使器件功耗大为降低。结构具有源漏对称可互换性,能够更好兼容MOSFET。

In order to improve the programmable electrostatic FET,a new device with square barrel gate and floating gate is designed.By designing the ring gate structure of square cylandrical gate,the band-band tunneling current is generated as the forward conduction current,and the metal is used as the electrode to form a high Schottky barrier with the silicon body,thus greatly reducing the thermal excitation current.The square cylandrical gate above the silicon body transfers charge to the floating gates,which reduces one electrode in structure.The charged floating gate charge helps to reduce the reverse leakage current for both N-type and P-type operating states,and achieves lower subthreshold swing and reverse leakage current,as well as higher forward conduction current and switching current ratio,thus greatly reducing the power consumption of the device.The structure has symmetrical interchangeability of source and drain,and can be better compatible with MOSFET.