氮化镓生长系统中源区反应的热力学分析和实验研究

A Thermodynamic Analysis and Experimental Study on the Reactions of the Source Zones in a Growth System of GaN

本文报道化学气相淀积法生长GaN薄膜材料的Ga-HCl-NH_(3)载气体系的源区反应热力学分析和实验研究结果.

The paper reports the results of thermodynamic analysis and experimental studies on the reactions in the source zones of the Ga-HCl-NH3-carrier gas system for depositing GaN thin fimls. It ispredicted theoretically that at higher temperatures and in an usual partial pressure range of input HC1 hydrogen chloride transforms completely into chlorides among which GaCl is the dominant species transporting toward deposition zone. Experimental study showed that the reactions in Ga source zone did not reach equilibrium and a significant influence of gas flow condition and temperature on the transformation of HC1 was found. In the deposition temperature range (1173-1323K) and NH_(3) initial partial pressure range (0.2 - 0.4atm) the thermal decomposition of NH3 was not considerable that NH_(3) would essentially be the species containing N and reacting with GaCl in deposition zone.