Si-H键伸缩振动频率与结构关系的研究

Studies on the Relationship Between the Si-H Stretching Vibration arid Molecular Structure

本文研究了开链及环状硅氢化合物中硅原子上取代基的电子效应和立体效应对Si—H键伸缩振动频率的影响。

The relationship between the Si-H stretching vibration and the electronic steric effect of substituents on Si atom was studied for 19 mono-hydrosilanes (9 cyclic and 10 open chain mono-hydrosilanes). The results show that, (1) The Si-H stretching vibration frequency is directly proportional to electronic withdrawing ability of substitucnis on Si atom in monohydrosilanes studied. Two excellent linear relationships between the Si-H stretching vibration frequencies and Hammett substituent constants are obtained. (2) Two excellent linear relationships between the Si-H stretching vibration frequencies and Taft substituent constants in mono-hydrosilanes are also found. (3) A reasonable mell cd of studying he electronic, steric effect of substituents on Si atcrr.s among the cyclic monohydro-tsilanes is proposed.