化学气相沉积法制备低镁含量的Mg_(x)Zn_(1-x)O纳米线紫外光电传感器

Fabrication of low Mg content Mg_(x)Zn_(1-x)O nanowires ultraviolet photosensors via chemical vapour deposition method

针对氧化锌紫外光电传感器对深紫外光探测能力弱的问题,通过镁掺杂氧化锌纳米线的方法调整氧化锌能带,从而提高氧化锌紫外光电传感器对深紫外光的探测灵敏度。通过扫描电子显微镜(SEM)、能谱分析(EDS)、透射电子显微镜(TEM)等表征手段对镁锌氧纳米线进行表征,结果表明成功制备镁锌氧纳米线。通过氧化锌纳米线探测器和镁掺杂氧化锌纳米线探测器对254 nm的深紫外进行对比测试,测试结果显示镁掺杂氧化锌探测器对254 nm波长的深紫外光的光响应性能增强,光电流从0.02μA提高至0.57μA。通过镁掺杂氧化锌纳米线的方法制备探测器,有效解决氧化锌纳米线探测器对深紫外光探测能力弱的问题,将为深紫外探测器的设计及制备方法提供有益的参考。

To solve the problem that ZnO ultraviolet photosensors is poor in detecting deep ultraviolet light, a method of fabricating Mg doped ZnO nanowires was proposed to adjust the ZnO energy band, so as to improve the sensitivity of ZnO ultraviolet photosensors in detecting deep ultraviolet light. The MgZnO nanowires were characterized by scanning electron microscope(SEM), energy spectrum analysis(EDS), transmission electron microscope(TEM) and other characterization methods. The results show that MgZnO nanowires were successfully prepared. The ZnO nanowire detector and the Mg doped ZnO nanowire detector were test with the 254 nm deep ultraviolet light, and the test results show that the photoresponse of the Mg doped ZnO detector to the 254 nm deep ultraviolet light was enhanced, the photocurrent increased from 0.02 μA to 0.57 μA. The detector is prepared by Mg doped ZnO nanowires, which can effectively improve the ZnO nanowires detectability in detecting deep ultraviolet light. It will provide beneficial reference for the design and preparation of deep ultraviolet detectors.