用光热反射热成像测量GaN HEMT稳态温度

Test the temperature of GaN HEMT under steady state using thermoreflectance thermography

为测量GaN HEMT表面GaN微小结构稳态条件下的温度分布,研发光热反射热成像实验装置并对典型的GaN HEMT进行温度测试。该实验装置以365 nm紫外LED作为光源,具备405 nm的空间分辨率。测试结果显示:实验装置能有效分辨被测件栅极与漏极之间GaN材料的温度分布,以热成像的方式测得被测件GaN材料区域的表面温度分布。在滤除噪声影响后,在14 W直流功耗下对GaN材料测温结果与国外商用仪器相比误差约为2℃。该光热反射实验装置可实现对GaN HEMT进行亚微米量级高空间分辨率稳态温度分布测试。

In order to measure the temperature distribution of the micro GaN structure on the surface of GaN HEMT under steady state,a thermo reflectance imaging experimental setup was developed.With a 365 nm UV LED as light source,the spatial resolution of the experimental setup is 405 nm.The test results showed that the experimental setup can resolve the temperature distribution on GaN area between gate and drain,the surface temperature distribution on GaN area of the DUT was captured in the form of thermal imaging.There was about 2℃error related to the results measured by a commercial thermo reflectance imaging setup under 14 W DC power dissipation for GaN material.The thermo reflectance experimental setup was capable of testing the surface temperature distribution of GaN HEMT with submicron-scale spatial resolution.