一款5G毫米波通信应用的39GHz GaN低噪声放大器

A 39GHz GaN Low Noise Amplifier for 5G Millimeter-Wave Communication Applications

文章介绍了一款37~40GHz GaN低噪声放大器(LNA)MMIC,其采用三级级联结构在37~40GHz的毫米波频段产生了超过20dB的小信号增益。通过对电路拓扑的正确选择及初级匹配网络的优化设计,该LNA在37~40GHz的噪声系数只有2.5dB。该LNA可进一步与GaN功率放大器及收/发开关单片集成,组成收发前端芯片并应用于5G毫米波通信中。

This paper introduces a new 37~40 GHz GaN low noise amplifier(LNA) MMIC developed by Nanjing GuoBo Electronics Company Limited, which produces a small signal gain of higher than 20 dB by adopting three cascaded stages structure at the 37~40 GHz millimeter-wave band. By correct selection of the circuit topology and optimized designing of the primary stage matching network, the LNA’s noise figure is only 2.5 dB. The LNA can be further monolithically integrated with the GaN power amplifier and T/R switch, forming the T/R front-end integrated circuit, and serving the 5 G millimeter-wave base-station application.