靶材用钨硅合金的制备工艺

Preparation technology of tungsten silicide alloys used for sputtering target

以钨硅混合粉体为原料,通过真空煅烧制备钨硅合金块体,再经破碎、烧结致密化后成功制备出符合半导体使用要求的钨硅靶材。研究了煅烧温度和保温时间对合金块体的物相成分、显微结构、氧含量和碳含量(质量分数)的影响。结果表明,通过高温煅烧合金化可以显著降低材料的氧含量和碳含量,煅烧温度对氧元素的脱除具有重要的影响。最佳制备工艺为1250℃煅烧5 h,在该条件下钨硅合金中氧的质量分数可由0.3000%降至0.0121%,材料中的单质钨完全转化为钨硅合金相。

W–Si alloy blocks were prepared by vacuum calcination,using the W and Si mixed powders as the raw materials,and the W–Si sputtering targets followed the requirements of semiconductor application were successfully prepared by crushing and sintering.The influence of calcination temperature and holding time on the phase composition,microstructure,oxygen content,and carbon content(mass fraction)of the alloyed block was investigated.The results indicate that the oxygen content and carbon content can be remarkably reduced by high temperature calcination process.In addition,the calcination temperature has an important effect on the removal of oxygen.The optimal preparation process is the calcination at 1250℃for 5 h.Under this condition,the mass fraction of oxygen in the material can be reduced from 0.3000%to 0.0121%,and the elemental tungsten phase in the material is completely transformed into the tungsten−silicon alloy phase.