Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

单个铁电半导体晶体管中实现逻辑运算和存算一体

Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel. Two-input AND, OR, and nonvolatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance(1000 operation cycles), and fast operating speed(10μs) are realized. In addition, optoelectrical OR logic and non-volatile implication(IMP) operations, as well as ternary-input optoelectrical logic and inmemory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors.

利用单个二维铁电半导体场效应晶体管即可以实现逻辑运算、存算一体以及光电逻辑和非易失性光电运算功能的集成该器件具有与传统场效应晶体管相同的结构,使用铁电半导体α-In_(2)Se_(3)作为导电沟道,本文首先证明。利用α-In_(2)Se_(3)面内和面外极化耦合的特性可以实现逻辑运算和存算一体的功能。之后,本文使用外加电压(栅压和偏压)及可见光作为输入信号,源漏电流作为输出信号。通过不同的编程条件实现了多种光电逻辑操作及光电存算一体功能。该器件表现出优秀的鲁棒性(1000个循环脉冲)和超快的操作速度(10μs)