高导热碳化硅陶瓷的研究进展

Research Progress on High Thermal Conductivity SiC Ceramics

近年来,集成电路、热交换器、半导体等行业的快速发展对碳化硅陶瓷的导热性能提出了更高的要求。碳化硅陶瓷内部存在的晶格氧、晶界、气孔等缺陷导致其室温热导率远低于碳化硅单晶理论室温热导率。综述了添加剂、烧结工艺等因素对碳化硅陶瓷室温热导率的影响,并对高导热碳化硅陶瓷的未来发展方向进行了展望。

In recent years,the rapid development of integrated circuit,heat exchanger,semiconductor industry has put forward higher requirements for the thermal conductivity of SiC ceramics.The thermal conductivity at room temperature of SiC ceramics is much lower than the theoretical value of single crystal SiC because of the defects such as lattice oxygen,grain boundary and porosity.The effects of additives and sintering process on the thermal conductivity at room temperature of SiC ceramics are reviewed.The future development direction of high thermal conductivity SiC ceramics is prospected.