全银烧结双面散热SiC模块的工艺设计

Development of Full Ag Sintering Double Side Cooling SiC Power Module

针对SiC芯片高工作结温、高功率密度和低杂散电感的封装技术要求,设计了一款双面散热SiC模块,仿真其杂散电感和均流性能,模块具有较低电感和较好的均流性。开发了全银烧结工艺和工艺流程,并试制了科研样品。通过动静态测试,在漏源极电流I_(d)为350 A和比导通电阻R_(DS-on)为3.95 mΩ下,计算出包含测试电路的总电感L_(s)为11.2 nH,模块具有较好的静动态性能。试验表明,全银烧结双面散热SiC模块具有优良的动静态性能,具有较大的应用前景。

On the package requirements of SiC devices of high operate temperature, high power density and low stray inductance,a double side cooling SiC power module was designed. The simulation results displayed that the power module has good current balance and low stray inductance. To fully explore SiC module capability, a full Ag sintering process and process flow was developed.The samples were manufactured. The dynamic and static test displayed that samples haved good static and dynamic characteristic, and under the condition that the R_(DS-on) was 3.95 mΩ and drain source current I_(d) was 350 A, the total stray inductance L_(s) was 11.2 nH. The test shows that the full Ag sintereing double-sided heat dissipation SiC module has excellent dynamic and static performance and has great application prospect.