高光泽度的硅酸腐片制备研究

Research on Acid Etching Wafer With the High Glossiness

为提高酸腐片光泽度和实现稳定量产,通过优化硅单晶片加工流程,将双面研磨硅片进行旋转磨削加工,然后对该硅片进行酸性腐蚀;制备的酸腐片表面光泽度达到360 Gu以上(反射率大于98%),腐蚀液的寿命延长到50 000片;该制备技术使得酸腐片的应用领域得到拓展,并降低生产成本和提高生产效率。

In order to improve the glossiness of acid etched wafer and achieve stable mass production, by optimizing process of producing silicon wafer, rotate and grind the wafer to be double-sided grinding wafer, then acid etch the wafer. The glossiness of acid etched wafer reached more than 360 Gu(reflectivity greater than 98%) and the service life of etchant was extended to 50 000 wafers.The application field of acid etching wafer was expanded, the processing cost of products was reduced and the processing efficiency of products was improved.