Electrically-manipulable electron-momentum filter based on antiparallel asymmetric doubleδ-magnetic-barrier semiconductor microstructure

We theoretically investigate the wave-vector filtering(WVF)effect for electrons in an antiparallel asymmetric doubleδ-magnetic-barrier microstructure under a bias,which can be fabricated experimentally by patterning two asymmetric ferromagnetic(FM)stripes on the top and the bottom of GaAs/AlxGa1−xAs heterostructure,respectively.It is found that an appreciable WVF effect appears because of an essentially two-dimensional(2D)process for electrons across this microstructure.WVF effect is found to be sensitive to the applied bias.WVF efficiency can be tuned by changing bias,which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.