摘要
Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs).In this work,avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are compared.By studying the evolution of breakdown voltage as a function of incident light wavelength,it is confirmed that at the deep ultraviolet(UV)wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n APDs.Meanwhile,at the same dark count rate,the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs.The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4H-SiC.In addition,this is the first time,to the best of our knowledge,to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.
作者
苏琳琳
徐尉宗
周东
任芳芳
陈敦军
张荣
郑有炓
陆海
Linlin Su;Weizong Xu;Dong Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu(School of Electronic Science and Engineering,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China;School of Electronic and Information Engineering,Nanjing University of Information Science&Technology Binjiang College,Wuxi 214105,China)
基金
supported by the National Key R&D Program of China (No.2016YFB0400902)
the National Natural Science Foundation of China (Nos.61921005 and 62004098)
the Natural Science Foundation of Jiangsu Province (No. BK20190302)
the Priority Academic Program Development of Jiangsu Higher Education Institutions