InAs/GaSb超晶格中短波双色探测器新型钝化方法研究

Novel Passivation Approach of InAs/GaSb Superlattice for Mid-Short Wavelength Dual-Color Infrared Detector

由于InAs/GaSb Ⅱ类超晶格材料有较高的表面态密度,易在表面生成导电氧化层,在将其制备成红外器件的过程中,首先要解决钝化问题。钝化效果和覆盖膜层质量对红外器件的表面漏电和噪声有很大影响。使用阳极氟化加硫化锌的方法,对中短波双色InAs/GaSb超晶格进行钝化,使用俄歇电子能谱测试证实了阳极氟化的可靠性,使用77 K下的J-V测试结果,对比证实了氟化的钝化效果和对漏电流密度的改善效果。结果表明,阳极氟化加硫化锌的钝化方法可以有效抑制漏电。

For higher surface state density of InAs/GaSb type Ⅱ superlattice materials,it is easy to form conductive oxide layer on the material surface.The first problem to be solved is passivation in the process of preparing infrared devices with InAs/GaSb superlattice materials.Passivation effect and coating quality have great influence on the surface leakage and noise of infrared devices.The method of zinc sulfide coating after anodic fluorination was used to passivate the mid-short wavelength dual-color InAs/GaSb superlattice.The reliability of anodic fluorination is confirmed by Auger electron spectroscopy.The J-V test results at 77 K are used to verify the passivation effect of fluorination and the improvement effect of leakage current density.The results show that the passivation method of zinc sulfide coating after anodic fluorination can effectively suppress the leakage current.