水平集法研究SON结构的形成机理与实验验证

Formation Mechanism of a Silicon-on-Nothing Structure with the Level-Set Approach and Experimental Verification

根据描述硅原子表面扩散现象的理论动力学模型,采用水平集模块,利用COMSOL Multiphysics■软件对空洞层上硅(SON)结构的形成过程进行模拟。通过改变硅沟槽的宽度、深度和间距等尺寸,仿真分析了这些参数对SON结构形成的影响。利用微电子机械系统(MEMS)工艺制备了初始微沟槽结构,观测了SON结构的形成过程。根据仿真结果与实验结果的对比,二者具有比较好的一致性,验证了理论模型的正确性。该研究提供了一种使用仿真软件来模拟SON结构形成过程的方法,使精确预测和控制SON结构的特征尺寸成为可能,为SON结构的制备提供参考。

Based on the theoretical kinetic model describing the diffusion of Si atoms on the surface,forming process of a silicon-on-nothing(SON)structure was simulated by using the Level-Set module in the COMSOL Multiphysics■software.Through the variations of width,depth and spacing of the silicon trenches,the influences of these parameters on the formation of the SON structure were simulated and analyzed.The initial micro-trench structure was fabricated by micro-electromechanical system(MEMS)technique,and the formation process of the SON structure was observed.According to the comparison between the simulation results and the experimental results,it is shown that they are well consistent,verifying the correctness of the theoretical model.The research provides a method to simulate the formation process of the SON structure by simulation software,making it possible to accurately predict and control the feature size of the SON structure and providing a reference for the preparation of the SON structure.