SiC晶片超精密化学机械抛光技术

Ultra Precision Chemical Mechanical Polishing Technology for SiC Wafer

分析了碳化硅(SiC)材料加工原理与难点,介绍了SiC晶片的精密抛光技术,使用化学机械抛光(CMP)方法对4英寸(1英寸=2.54 cm)4H-SiC晶片进行了超精密加工,通过调整抛光液体积流量、抛光头转速、抛光压力以及抛光时间等工艺参数对SiC晶片进行了对比加工实验。采用原子力显微镜(AFM)对CMP前后SiC晶片的Si面粗糙度进行了测试,并对各工艺参数对晶片粗糙度的影响进行了分析。经过对工艺参数的优化,得到了表面粗糙度为0.099 nm的超光滑表面SiC晶片。

The processing principle and difficulties of the SiC material were analyzed,and the precision polishing technology of the SiC wafer was introduced.The 4-inch(1 inch=2.54 cm)4HSiC wafer was processed in ultra-precision by chemical mechanical polishing(CMP)method.The contrast processing experiments of the SiC wafer were carried out by adjusting the process parameters,including the volume flow of polishing slurry,rotation speed of polishing head,polishing pressure,polishing time and so on.The Si surface roughness of the SiC wafer before and after CMP was measured by atomic force microscope(AFM),and the effects of the process parameters on the wafer roughness were analyzed.After optimizing the process parameters,the ultra smooth surface SiC wafer with a surface roughness of 0.099 nm was obtained.