摘要
Narrowband microwave generation with tuneable frequency is demonstrated by illuminating a photoconductive semiconductor switch(PCSS)with a burst-mode fibre laser.The whole system is composed of a high-power linearly polarized burst-mode pulsed fibre laser and a linear-state PCSS.To obtain a high-performance microwave signal,a desired envelope of burst is necessary and a pulse pre-compensation technique is adopted to avoid envelope distortion induced by the gain-saturation effect.Resulting from the technique,homogenous peak power distribution in each burst is ensured.The maximum energy of the laser burst pulse reaches 200μJ with a burst duration of 100 ns at the average power of 10 W,corresponding to a peak power of 4 kW.When the PCSS is illuminated by the burst-mode fibre laser,narrowband microwave generation with tuneable frequency(0.80-1.12 GHz)is obtained with a power up to 300 W.To the best of the authors’knowledge,it is the first demonstration of frequency-tuneable narrowband microwave generation based on a fibre laser.The high-power burst-mode fibre laser reported here has great potential for generating high-power arbitrary microwave signals for a great deal of applicable demands such as smart adaptive radar and intelligent high-power microwave systems.