基于掺杂改性的石墨烯费米能级调谐研究

Studies on Fermi Level Tuning of Doped Graphene

石墨烯是一种零带隙材料,为了实现这一先进材料在光电领域中的应用,必须对其进行精确的电子调制。概述了石墨烯费米能级调制的各种策略,包括杂原子取代、分子吸附、衬底相互作用、外界刺激响应等,探讨了各种掺杂类型对其电化学性能的影响。研究表明,石墨烯的有效掺杂可以精确控制其n型或p型特性,获得所需的电荷载流子浓度,促进新型石墨烯杂化材料在分子电子学、光电检测以及催化等领域中的应用。

Graphene is essentially a zero band gap material,which should be electronically modulated precisely to achieve the application.The various strategies for modulating fermi level of graphene,including heteroatom substitution,molecular adsorption,graphene/substrate interaction and external stimulus response,are outlined to explore the effects of various doping on the electrochemical properties.The aim is to select a suitable doping method to precisely and effectively control the n-or p-type doping in graphene for obtaining the desired charge carrier concentration and promoting the application of novel graphene hybrid materials in molecular electronics,photoelectric detection,as well as catalysis.