Scalable manufacture of vertical p-GaN/n-SnO_(2) heterostructure for self-powered ultraviolet photodetector, solar cell and dual-color light emitting diode

Vertical SnO_(2)based p-n junctions are pivotal since they built the core components in photoelectronic systems.Nevertheless,preparation of high-quality p-SnO_(2)with controllable hole mobility and concentration is still a great challenge owing to the self-compensating effect and lattice distortion caused by the radius discrepancy between host and doped atoms.Herein,p type GaN:Mg grown by metal organic chemical vapor deposition is employed as hole transportation layer to construct p-n heterojunction with intrinsic n-SnO_(2)prepared by atomic layer deposition.Both material preparation techniques are compatible with current industrial mass production processes.The p-GaN/n-SnO_(2)heterojunction can be developed as solar cell,dual-color light emitting diode and self-powered,high speed ultraviolet(UV)photodetector with external quantum efficiency of 74%at 0 V bias voltage.In addition,direct recombination of donor bound excitons(D0 X)and UV emission red shifts caused by quantum confinement Stack effect are observed in SnO_(2).Since our device fabrication technique is a standard craft in photoelectronics,the study of p-GaN/n-SnO_(2)heterojunction suggests a simple and effective strategy for large scale device integration in next generation high performance photoelectronic devices.