碳化硅控制器用膜电容器设计与测试

Design and Test of Film Capacitor Used in SiC Controller

针对一款碳化硅控制器用膜电容器,采用有限元热仿真分析和台架测试相结合的方法研究其内部温度分布情况。设计了膜电容器内部结构,介绍了该膜电容器在碳化硅控制器内部的结构布置情况,建立了膜电容器的热仿真模型,重点研究了膜电容器在碳化硅控制器额定工况下的温度分布规律。制作膜电容器样品并在其内部埋设热电偶,对该膜电容器在额定工况下的实际温度进行了台架测试验证。通过仿真和测试结果的对比分析,证明了采用有限元热仿真研究碳化硅控制器用膜电容器的有效性。研究结果对于碳化硅控制器用膜电容器的高效散热设计具有一定的参考价值。

For a film capacitor used in SiC controller,the internal temperature distribution is studied by combining finite element thermal simulation analysis and bench test.The internal structure of film capacitor is designed,the structure layout of the film capacitor in the SiC controller is introduced,and the thermal simulation model of the film capacitor is established.The temperature distribution rule of the film capacitor under the rated working condition of the SiC controller is mainly studied.The film capacitor sample is made and thermocouples are embedded in it.The actual temperature of the film capacitor under the rated working condition is verified by bench test.Through the comparative analysis of the simulation and test results,the effectiveness of using finite element thermal simulation to study the film capacitor of SiC controller is proved.The research results can provide certain reference value for the efficient heat dissipation design of the film capacitor for SiC controller.