射频器件超细引线键合射频性能仿真

Research on the RF performance simulation of ultra-fine wire bonding of RF devices

随着雷达性能指标不断提高、体积不断压缩,作为其关键组成部分成之一的T/R(transmitter and receiver)组件也不断向小型化和高密度方向发展.采用超高密度引线键合技术能够实现高密度射频器件封装,但也会带来键合焊点可靠性下降、电路射频性能差等问题.针对键合线尺寸减小而引起射频性能下降的问题,采用HFSS软件探究了在0~20 GHz金带尺寸变化对电路射频性能的影响规律,并利用ANSYS Q3D和ADS软件对超细引线键合的电路进行阻抗匹配.结果表明,对于金丝和金带而言,插入微带双枝短截线匹配结构均能明显提高电路的射频性能.对于类型1结构,S21与S12的传输功率能达到-0.049 dB.对于类型2结构,S21与S12的传输功率能达到-7.245×10-5 dB,说明类型2结构下的信号传输几乎无损耗.该结果为超细引线键合技术在射频电路中的应用提供了理论指导.

With the continuous improvement of radar performance indicators and the continuous compression of the volume, the T/R(transmitter and receiver) component as one of its key components is also continuously developing in the direction of miniaturization and high density. Ultra-highdensity wire bonding technology is adopted to realize highdensity RF device packaging form. However, it will cause the reliability of bonding solder joints to decrease, and the circuit RF performance is poor. Aiming at the problem of the degradation of radio frequency performance caused by the small bond size, this paper used HFSS software to explore the influence of the change in the gold strip’s size on the circuit radio frequency performance. And ANSYS Q3D and ADS software were used to match the impedance of the ultra-fine wire bonding circuit. The results show that for gold wire and gold ribbon, inserting the microstrip double-stub matching structure can significantly improve the radio frequency performance of the circuit. For type 1 structure, the transmission power of S21 and S12 can reach -0.049 dB. For type 2 Structure, the transmission power of S21 and S12 can reach -7.245 × 10-5 d B, indicating that the signal transmission under the type 2 structure is almost lossless. This result can lay a theoretical foundation for the application of ultra-fine wire bonding technology in radio frequency circuits.