Phase-change memory based on matched Ge-Te,Sb-Te,and In-Te octahedrons:Improved electrical performances and robust thermal stability

Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of PCM.However,the low thermal stability of Ge2Sb2Te5(GST)limits further application.Here,we demonstrate PCM based on In0.9Ge2Sb2Te5(IGST)alloy,showing 180C 10-years data retention,6 ns set speed,one order of magnitude longer life time,and 75%reduced power consumption compared to GST-based device.The In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons,acting as nucleation centers to boost the set speed and enhance the endurance of IGST device.Introducing stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.