摘要
There is an increasing need for high performance oscillators as the faster transmission networks demand for high frequency signals.Opto-electronic oscillators(OEO)enable us to make better oscillators in terms of size,weight and power.In this paper,photonic integration is proposed for realizing the OEO with micro ring resonator(MRR)and radio-frequency(RF)amplifiers of monolithic microwave integrated circuit(MMIC),which can be used for generating 110 GHz sine wave.The OEO architecture is proposed and block diagram developed considering Silicon based MRR and three-stage RF amplifier based on Ga N high-electron-mobility transistor(HEMT).A simulation model is developed according to the Klein model of MRR and is validated against the calculated performance parameters.MRR dimensions are calculated as with silicon on insulator(SOI)technology and a radius 5.27μm for the device is derived.Free spectral range(FSR)of 48.52 nm and filter rejection ratio of 16.79 d B are obtained for this device.The proposed RF amplifier is modelled with Ga N parameters derived from high frequency pinch-off model and with power amplifier considerations.The gain for this amplifier is obtained as 10.6 d B.The OEO design is developed in this project in such a way that the system can be manufactured with the existing methods.
基金
a part of final year M.Tech Project of faculty of Engineering and Technology,Department of Electronics and communication engineering,Ramaiah University of Applied sciences
the Department of ECE,RUAS。