AlGaN/GaN HEMT器件的低频噪声测试方法研究

Study on Low Frequency Noise Measurement of AlGaN/GaN HEMT

AlGaN/GaN HEMT器件的低频噪声比常规电参数对缺陷更为敏感,缺陷信息更加丰富,且具有不可恢复的特点,与器件的质量和可靠性密切相关。该文设计了AlGaN/GaN HEMT器件低频噪声测试的偏置电路、建立了一套低频噪声测试系统,对不同测试端口和偏置条件下的低频噪声水平进行了测试,通过对比分析得到了低频噪声测试结果与电压、电流之间的关系,并对测试结果进行了误差分析,对AlGaN/GaN HEMT器件的可靠性评价有重要意义。

The low frequency noise of AlGaN/GaN HEMT is more sensitive to defects than conventional electrical parameters,and the defect information is richer.It is non-recoverable and is closely related to the quality and reliability of the device.In this paper,the low frequency noise test bias circuit of AlGaN/GaN HEMT was designed.A set of low frequency noise test system was established.We also tested the low frequency noise of different port of AlGaN/GaN HEMT under different bias condition.By comparison and analysis,the relationship between low frequency noise and voltage,current was obtained,and error analysis was made.This study is important to reliability evaluation of AlGaN/GaN HEMT.