后摩尔时代先进CMOS技术

Advanced CMOS technology in the post-Moore era

随着半导体器件从平面结构走向3D结构,集成电路技术进入“后摩尔时代”。论述了目前集成电路技术的需求和集成电路产业的研发现状,梳理了在先进技术节点下的绝缘层上硅、鳍型场效应晶体管和环栅场效应晶体管等新型器件的优势、研究现状及不足之处,分析了随着器件尺寸的减小,工艺技术的发展和其面临的挑战,为后摩尔时代集成电路技术的持续发展提供新的视野和观点。

As the structure of semiconductor device developed from planar to 3D,integrated circuit technology entered into the post-Moore era.This paper discusses the requirements of integrated circuit(IC)technology and the current status of IC industry.The advantages,research status and issues of FDSOI,FinFET and GAA under the advanced technology nodes are summarized.The development of process technology and its challenges under advanced technology nodes are analyzed,which provides a new vision and perspective for the continuous development of IC technology in the post-Moore era.