基于绝缘层上硅衬底的新型半导体光电探测器件研究

Research of novel photodetectors based on the silicon-on-insulator substrate

回顾了近年来课题组基于绝缘层上硅衬底(silicon-on-insulator,SOI)实现的一系列新型半导体器件成果。基于正反馈工作机制的零亚阈摆幅器件Z2-FET具有快速开关和栅控回滞特性,可用于高性能存储、静电保护和高灵敏度光电探测等领域。界面耦合光电探测器(interface coupled photodetector,ICPD)利用了SOI中的界面耦合效应,可大幅增强光响应度。进一步将其与SOI/MoS2混合维度光电探测器结合,ICPD展示出可调频谱的光电探测性能。基于双光栅效应实现的波长探测器,其输出电学信号只对波长而非光强敏感。原位光电子探测器(photoelectron in-situ sensing device,PISD)基于SOI的界面耦合和深耗尽效应工作原理,在衬底进行光电转换并可原位感应光电子,比传统的CMOS图像传感器(CMOS image sensor,CIS)具有更紧凑的结构。课题组研究针对SOI器件顶层硅和衬底的能带或电势调控,结合新原理和新材料,实现了SOI衬底在光电探测器件领域的系列创新。

This paper reviews our recent work on novel semiconductor devices based on silicon-on-insulator(SOI)substrates.The Z2-FET operating with the positive feedback mechanism owns almost zero subthreshold swing and gate-controlled hysteresis characteristics.It has found applications in high performance memories,electrostatic discharge protection and photodetection.The interface coupled photodetector(ICPD)utilizes the interface coupling effect in SOI to achieve high responsivity.Further being combined with SOI/MoS2 hybrid photodetectors,ICPD demonstrates the tunable spectrum performance.The wavelength photodetector based on the photogating effect has been demonstrated with the output signal only sensitive to the wavelength instead of intensity of the light.The photoelectron in-situ sensing device(PISD)utilizes the interface coupling and deep depletion effect in SOI for photoelectric conversion and in-situ sensing,which has a more compact structure than the conventional CMOS image sensor(CIS).The research of our group utilizes the modulation of energy band and electrostatic potential in the top silicon layer and substrate,and combines new principles and materials to achieve a series of innovations in the field of SOI based photodetector.