摘要
等离子体增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)是高端集成电路制造中的关键工艺。通过对PECVD工艺及建模方法研究,提出了基于蒙特卡罗(MC)方法的PECVD二维模型。该模型将薄膜沉积速率计算和轮廓形貌演化集合一体,并且深入研究了粒子和沟槽结构的相对大小以及粒子之间不同的接触方式对模型仿真能力的影响,使得仿真结果更加接近实际工艺条件下的生长形貌。通过该模型模拟了不同深宽比(aspect ratio)沟槽的PECVD沉积情况,得到了符合实验数据的结果;并通过设定不同比例的离子增强部分进行对比,发现LPCVD的台阶覆盖性优于PECVD。
Plasma-enhanced chemical vapor deposition(PECVD)is a key process in high-end integrated circuit(IC)manufacturing.Through the study of plasma-enhanced chemical vapor deposition(PECVD)process and modeling method,a PECVD two-dimensional model based on Monte Carlo(MC)method is proposed.The model combines film deposition rate calculation and contour evolution,and deeply studies the relative size of particles and groove structures and the influence of different contact methods between particles on the simulation ability of the model,which makes the simulation results closer to the growth morphology under the actual process conditions.The PECVD deposition of different aspect ratio grooves is simulated by this model,and the results of conforming to the experimental data are obtained.By setting different proportions of ion enhancement parts,it is found that the step coverage of LPCVD is better than that of PECVD.
作者
丁虎文
邵花
陈睿
韦亚一
DING Huwen;SHAO Hua;CHEN Rui;WEI Yayi(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029;University of Chinese Academy of Sciences,Beijing 101408)
出处
《微纳电子与智能制造》
2021年第1期75-81,共7页
Micro/nano Electronics and Intelligent Manufacturing
基金
国家自然科学基金“集成电路制造中关键图形工艺的模型研究”(61874002)项目资助。
