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CVD外延锗锡及其光电探测器最新研究进展 被引量:1

Latest research progress for GeSn CVD growth and their photodetectors
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摘要 锗锡具有吸收系数高、直接带隙发光效率高、可用CVD生长、器件制备与硅工艺兼容等优势,是非常重要的硅基光电子材料。锗锡CVD生长技术及其探测器在理论意义和长远的军民用价值,受到欧美军事部门及政府机构的广泛资助。综述了锗锡CVD生长技术的研究历史、生长难点与发展趋势。基于CVD技术生长的锗锡,并结合锗锡探测器的发展史,探讨了高性能锗锡探测器在短波红外(SWIR)、中波红外(MWIR)和长波红外(LWIR)波段应用所面临的关键科学问题,强调了锗锡单光子雪崩光电二极管(SPAD)的优势及其在量子计算、激光雷达和无人驾驶等领域的应用前景。 GeSn has the advantages of high absorption coefficient,high direct bandgap light emission efficiency,able to grow by CVD,and compatible with Si CMOS technology,indicating it is a vital Si-based optoelectronic material.Theoretical significance,and long-term military and civilian value are being widely funded by the military departments and government agencies in the Western country.This paper reviews the research history,growth difficulties,and development trend of GeSn CVD growth technology.Based on the GeSn grown by CVD and combine with the GeSn detectors history,critical scientific problems faced by the application of high performance GeSn detector in short wavelength infrared(SWIR),medium wavelength infrared(MWIR),and long wavelength infrared(LWIR)bands are discussed.Besides,advantages of GeSn single photon avalanche photodiodes(SPAD)and its application prospects in quantum computing,lidar,and driver-less are emphasized.
作者 苗渊浩 王桂磊 孔真真 赵雪薇 芦宾 董林鹏 RADAMSON H H MIAO Yuanhao;WANG Guilei;KONG Zhenzhen;ZHAO Xuewei;LU Bin;DONG Linpeng;RADAMSON H H(Integrated Circuit Advanced Progress R&D Center,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;Research and Development Center of Optoelectronic Hybrid IC,Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangdong 510535,China;School of Physics and Information Engineering,Shanxi Normal University,Linfen 041004,China;Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test,Xi’an Technological University,Xi’an 710032,China)
出处 《微纳电子与智能制造》 2021年第1期129-135,共7页 Micro/nano Electronics and Intelligent Manufacturing
基金 国家自然科学基金重大研究计划(92064002)重点支持 广东省科技计划(2019B090909006)项目资助。
关键词 锗锡 CVD 探测器 硅工艺兼容 GeSn absorption coefficient light emission CVD detectors
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