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基于集成门极换流晶闸管的三电平有源整流电源系统的分析

Analysis of Three-level AFE System Based on IGCT
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摘要 对集成门极换流晶闸管(Integrated Gate-Commutated Thyristor,IGCT)功率开关器件和基于IGCT的二极管中点钳位型三电平拓扑进行了描述,并对其工作原理和RLCD缓冲回路的工作特性进行了分析,描述了整流状态和回馈状态下的电流回路。同时,通过矢量控制方法对有源整流电源(Active Front End,AFE)电源系统进行性能控制,对矢量控制过程进行分析,并利用矢量控制实现有功功率和无功功率的分别控制,实现了功率因数任意可调。最后,通过实验给出了IGCT开通和关断的实验波形,验证了基于IGCT的AFE系统分析的正确性,为IGCT三电平相关电路的分析与设计提供了理论参考依据。 Integrated gate-commutated thyristor(IGCT)and neutral point clamped(NPC)three-level topology based on IGCT as power switching device are described,and its working principle and operating characteristics of RLCD buffer cir-cuit are analyzed,and the current circuits in rectifier state and feedback state are described.At the same time,the performance of AFE power system is controlled by vector control method,the process of vector control is analyzed,and the active power and reactive power are controlled respectively by vector control,so that the power factor can be adjusted arbitrarily.The experimental waveforms of IGCT on and off are given through experiments,which verifies the correctness of AFE system analysis based on IGCT,and provides a theoretical reference for the analysis and design of IGCT three-level correla-tive circuit.
作者 孙传杰 张中磊 李楠 徐莉 张旭东 SUN Chuanjie;ZHANG Zhonglei;LI Nan;XU Li;ZHANG Xudong(Tianjin Research Institute of Electric Science Co.,Ltd.,Tianjin 300180,China)
出处 《天津科技》 2021年第11期48-51,共4页 Tianjin Science & Technology
关键词 IGCT 三电平 AFE RLCD 缓冲回路 矢量控制 IGCT three-level AFE RLCD buffer circuit vector control
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  • 1袁立强,赵争鸣,白华,李崇坚,李耀华.用于大功率变流器的IGCT功能型模型(英文)[J].中国电机工程学报,2004,24(6):65-69. 被引量:22
  • 2赵争鸣,张海涛,袁立强,白华,杨志.基于IGCT的高压三电平变频器失效机理及保护策略[J].电工技术学报,2006,21(5):1-6. 被引量:45
  • 3张明,戴小平,李继鲁,蒋谊,陈芳林.KIc 4000-45非对称型IGCT组件的研究[J].变流技术与电力牵引,2007(2):22-26. 被引量:14
  • 4王成胜,李崇坚,李耀华,绳伟辉,兰志明.7.5MVA大功率三电平IGCT交-直-交变流器[J].电工技术学报,2007,22(8):24-27. 被引量:18
  • 5Steimer P K,Gruning H E,Werninger J,et al.IGCT-a newemerging technology for high power,low cost inverter[J].IEEE Industry Applications Magazine,1999,5(4):12-18.
  • 6Steimer P,Apeldoorn O,Carroll E,et al.IGCT technologybaseline and future opportunities[C]//Transmission andDistribution Conference and Exposition.Atlanta:IEEE,2001:1182-1187.
  • 7Bernet.Comparison of high-power IGBT’s andhard-driven GTO’s for high-power inverters[J].IEEETransactions on Industry Applications,1999,35(2):487-495.
  • 8Ge Qiongxuan,Li Yaohua,Li Kong.Investigation oftopologies for IGCT three-level inverter[C]//InternationalConference on Industrial Technology(ICIT).Chengdu,China:IEEE Industrial Electronics Society,2008:1-5.
  • 9Li Chongjian,Wang Chengsheng,Zhu Chunyi,et al.Research on the transient state of large power voltagesource inverter with IGCTs[C]//Asia-Pacific InternationalSymposium on Electromagnetic Compatibility(APEMC).Beijing,China:China Electrotechnical Society,2010:218-221.
  • 10Tan Longcheng,Liu Congwei,Li Yaohua,et al.The effectof minimum pulse width limitation on neutral pointvoltage control and their cooperation in high powerthree-level NPC converters[C]//Electrical Machines andSystems(ICEMS).Incheon,Korea:IEEE,2010:215-218.

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