摘要
Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe_(2)/α-In_(2)Se_(3) ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization inα-In_(2)Se_(3).Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.Optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.
基金
This work was supported by the National Key R&D Program of China(Nos.2018YFA0703700 and 2016YFA0200700)
the National Natural Science Foundation of China(Nos.91964203,61625401,61851403,61974036,61804146,and 61804035)
the strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000)
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication.The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
