Ag NWs@SH-GO复合透明导电薄膜的制备与电学性能

Preparation and Electrical Properties of Ag NWs@SH-GO Transparent Conductive Composite Films

针对银纳米线透明导电薄膜(Ag NWs-TCFs)电阻高、电学稳定性差的问题,利用巯基乙胺的巯基与氧化石墨烯枝接,自组装成巯基化氧化石墨烯(SH-GO),并通过SH-GO官能团与Ag NWs结合,制备了Ag NWs@SH-GO复合透明导电薄膜。结果显示,当SH-GO浓度为3 mg/mL时,Ag NWs@SH-GO复合透明导电薄膜的方块电阻为8.6Ω/sq,光透过率大于85%(波长550 nm);将其置于空气中60d后,方块电阻增加率仅为8.66%,表现出优异的环境稳定性;将样品弯曲1000次以后,方块电阻低于50.0Ω/sq,具有良好的机械抗弯曲性能。

In order to solve the problems of high resistance and poor electrical stability of Ag nanowires(NWs)transparent conductive films(Ag NWs-TCFs),mercaptoethylamine mercapto group was grafted to GO to self-assemble thiol-functionalized graphene oxide(SH-GO).Accordingly,Ag NWs@SH-GO composite transparent conductive films were obtained by combining the SH-GO functional group with Ag NWs.As the concentration of SH-GO was 3 mg/mL,the sheet resistance of the Ag NWs@SH-GO composite conductive film was 8.6Ω/sq,while the optical transmittance was>85%at 550 nm.After being placed in the air for 60 days,the sheet resistance was increased by only 8.66%,showing excellent environmental stability.After bending for 1000 cycles,sheet resistance of the sample was still<50.0Ω/sq,illustrating good mechanical bending resistance.